PART |
Description |
Maker |
HY27SG082G2M-TCB HY27UG162G2M-TCB HY27SG162G2M-SEP |
256M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 128M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 128M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
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HYNIX SEMICONDUCTOR INC
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S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64 256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64 4M X 16 FLASH 3V PROM, 90 ns, PDSO56 4M X 16 FLASH 3V PROM, 100 ns, PDSO48 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 2M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
Spansion, Inc. SPANSION LLC
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HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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AS8FLC1M32BP-70/IT AS8FLC1M32BQ-100/XT AS8FLC1M32B |
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66 1M X 32 FLASH 3V PROM, 100 ns, CQFP68 1M X 32 FLASH 3V PROM, 120 ns, CQFP68
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Micross Components
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CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 x8 Flash EEPROM x8闪存EEPROM 1 Megabit CMOS Boot Block Flash Memory
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Ironwood Electronics Atmel, Corp. Rectron Semiconductor http://
|
GLS37VF040-70-3C-NHE SST37VF020-70-3C-PHE SST37VF0 |
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 128K X 8 FLASH 2.7V PROM, 70 ns, PDIP32
|
SILICON STORAGE TECHNOLOGY INC
|
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63 150 x 32 pixel format, LED Backlight available ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
AT49F002N-90JC AT49F002NT-70JL AT49F002NT-90JL AT4 |
256K X 8 FLASH 5V PROM, 70 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 120 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 550NS,PDIP,IND TEMP,5.0V(FLASH) 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
聚兴科技股份有限公司 Atmel, Corp. ATMEL CORP
|
S29GL032N90FAI033 S29GL032N90BAI043 S29GL032N70TAI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA64 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PDSO56 2M X 16 FLASH 3V PROM, 90 ns, PDSO56 2M X 16 FLASH 3V PROM, 70 ns, PBGA64 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
MX28F1000PRC-90-C4 MX28F1000PQC-90-C4 MX28F1000PTC |
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, REVERSE, TSOP1-32 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 PLASTIC, LCC-32 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, TSOP1-32 128K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
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S29NS016J0PBJW003 S29NS064J0LBJW000 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 1M X 16 FLASH 1.8V PROM, 65 ns, PBGA44 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
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Spansion, Inc. SPANSION LLC
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